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UL Recognized 100A 1200V IGBT Module


  • YZPST-100HF120TK-G1

IGBT Moudle YZPST-100HF120TK-G1

       FEATURES

High short circuit capability, self limiting short circuit current
IGBT CHIP(Trench+ Field Stop technology) 
VCE(sat) with positive temperature coefficient Fast switching, Low switching losses
Free wheeling diodes with fast and soft reverse recovery

APPLICATIONS

High frequency switching application
Welding converters
Motion/servo control
UPS systems

Yzpst 100hf120tk G1 1

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

IGBT

VCES

Collector - Emitter Voltage

TVj=25°C

1250

V

VGES

Gate - Emitter Voltage

 

±30

V

 

IC

 

DC Collector Current

TC=25°C

150

A

TC=80°C

100

A

ICM

Repetitive Peak Collector Current

tp=1ms

200

A

Ptot

Power Dissipation Per IGBT

694

W

Diode

VRRM

Repetitive Reverse Voltage

TVj=25°C

1250

V

 

IF(AV)

 

Average Forward Current

TC=25°C

150

A

TC=80°C

100

A

IFRM

Repetitive Peak Forward Current

tp=1ms

200

A


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MODULE CHARACTERISTICS  TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

TVj max

Max. Junction Temperature

 

150

°C

TVj op

Operating Temperature

 

-40

 

150

°C

Tstg

Storage Temperature

 

-40

125

°C

Visol

Insulation Test Voltage

AC, t=1min

3000

V

Torque

To-Sink

Recommended M6

3

 

5

N·m

Torque

To-Terminal

Recommended M5

2.5

 

5

N·m

Weight

 

 

 

176

 

g

CIRCUIT DIAGRAM

Yzpst 100hf120tk G1 2



PACKAGE OUTLINE

YZPST-100HF120TK-G1-3

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