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NPN silicon power transistors MJE2955T complementary to MJE3055T


  • YZPST-MJE2955T

PNP SILICON POWER TRANSISTORS MJE2955T

DESRCRIPTION:
The MJE2955T is an PNP transistor, which is complementary to MJE3055T and is used in audio power amplification and power conversion circuits.

Package form: TO-220

YZPST-MJE2955T-1

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Continuous Collector Current

-10

A

PTOT

Total dissipation at Tcase=25 ℃

75

W

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-55-150



● ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

Symbol

Parameter

Test Condition

Value

Unit

Min

Type

Max

VCBO

Collector-Base Breakdown Voltage

IC= -10mA

-70

 

 

V

VCEO

Collector-Emitter Breakdown Voltage

IC= -200mA

-60

 

 

V

VEBO

Emitter-Base Breakdown Voltage

IE= -10mA

- 5

 

 

V

ICBO

Collector Cutoff Current

VCB= -70V

 

 

1

mA

IEBO

Emitter Cutoff Current

VEB= -5V

 

 

5

mA

hFE

DC Current Gain

IC= -4A,VCE= -4V

20

 

100

 

VCE(sat)

Collector-Base Breakdown Voltage

IC= -4A,IB= -0.4A

 

 

-1.1

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -4A,IB= -4A

 

 

-1.8

V

fT

Transition Frequency

VCE=10V, IC=0.5Af=1MHZ

2

 

 

MHZ

aPulse Testtp ≤300usδ≤2%


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 PACKAGE MECHANICAL DATA

YZPST-MJE2955T-2

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