“Men Black Sports Shoes” has been added to your cart.

N-channel Enhanced mode TO-247 MOSFET


  • YZPST-STW20NM60

Promising Chip YZPST-STW20NM60

N-channel Enhanced mode TO-247 MOSFET  

Features

High rugge dness

Lo RDS(ON) (Typ 0.22)@VGS=10V

Low Ga te  Cha rge (Typ 84nC)

l Improve d dv/dt Ca pa bility

l 100% Ava la nche Te s te d

l App lica tion:UPS , Charge, PC Power ,Inverter

 

General Description

This power MOSFET is produced with advanced technology of Promising Chip.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDSS

Drain to source voltage

600

V

 

ID

Continous drain current(@Tc=25)

20*

A

Continous drain current(@Tc=100)

12*

A

IDM

Drain current pulsed

78

A

VGS

Gate to source voltage

±30

V

EAS

Single pulsed avalanche energy

1284

mJ

EAR

Repetitive pulsed avalanche energy

97

mJ

dv/dt

Peak diode recovery dv/dt

5

V/ns

 

PD

Total power dissipation(@Tc=25)

42.3

W

Derating factor above 25

0.32

W/

TSTG,TJ

Operating junction temperature & storage temperature

-55~+150

TL

Maximum lead temperature for soldering purpose,1/8 from case for 5second

300

 

*Drain current is limited by junction temperature

Thermal characteristics:

Symbol

Parameter

Value

Unit

Rthjc

Thermal resistance , Junction to case

3.1

/W

Rthja

Thermal resistance , Junction to ambient

49

/W

"


Drawing Name

TO-247-3L   (LL)

YZPST-STW20NM60-1.jpgYZPST-STW20NM60-2.jpg




"