High dV/dt Capability 1600V high power thyristor for phase control applications

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

high power thyristor YZPST-R3559TD16K

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

Device Type	VRRM (1)	VDRM (1)	VRSM (1)
R3559TD16K	1600	1600	1700

V_RRM = Repetitive peak reverse voltage

V_DRM = Repetitive peak off state voltage

V_RSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

I_{RRM /}I_DRM

20 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 ^oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated V_DRM. Gate open.

Tj = 125 ^oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

with EIA/NIMA Standard RS-397, Section

5-2-2-6. The value defined would be in addi-

tion to that obtained from a snubber circuit,

comprising a 0.2 mF capacitor and 20 ohms

resistance in parallel with the thristor under

test.

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Conducting - on state

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Average value of on-state current	I_T(AV)		3500		A	Sinewave,180^o conduction,T_c=70^oC
RMS value of on-state current	I_TRMS		7000		A	Nominal value
Peak one cPSTCle surge (non repetitive) current	I_TSM		42000 38000		A A	8.3 msec (60Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC 10.0 msec (50Hz), sinusoidal wave- shape, 180^o conduction, T_j = 125 ^oC
I square t	I²t		7.5x10⁶		A²s	8.3 msec
Latching current	I_L		1000		mA	V_D = 24 V; R_L= 12 ohms
Holding current	I_H		500		mA	V_{D =} 24 V; I = 2.5 A
Peak on-state voltage	V_TM		1.95		V	I_TM = 5000 A; Tj = 125 ^oC
Critical rate of rise of on-state current (5, 6)	di/dt		800		A/ms	Switching from V_DRM £ 1000 V, non-repetitive
Critical rate of rise of on-state current (6)	di/dt		300		A/ms	Switching from V_DRM £ 1000 V

Gating

Parameter	Symbol	Min.	Max.	Typ.	Units	Conditions
Peak gate power dissipation	P_GM		200		W	t_p= 40 us
Average gate power dissipation	P_G(AV)		5		W
Peak gate current	I_GM		20		A
Gate current required to trigger all units	I_GT		300 200 125		mA mA mA	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC V_D = 6 V;R_L = 3 ohms;T_j = +125^oC
Gate voltage required to trigger all units	V_GT	0.30	5 4		V V V	V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC V_D = Rated V_DRM; R_L = 1000 ohms; T_j = + 125 ^oC
Peak negative voltage	V_GRM		20		V