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Fast switching 800V N-Channel Power MOSFET


  • YZPST-SP50N80FX

800V N-Channel Power MOSFET

YZPST-SP50N80FX

FEATURES
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATIONS
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
YZPST-SP50N80FX-1



Device Ordering Marking Packing Information

 

Ordering Number

 

Package

 

Marking

 

Packing

 

SP50N80FX

 

SOT-227

 

SP50N80FX

 

Tube

Absolute Maximum Ratings TC = 25ºC, unless otherwise noted

Parameter

Symbol

Value

Unit

Drain-Source Voltage (VGS = 0V)

VDSS

800

V

Continuous Drain Current

ID

50

A

Pulsed Drain Current (note1)

IDM

200

A

Gate-Source Voltage

VGSS

±30

V

Single Pulse Avalanche Energy (note2)

EAS

4500

mJ

Repetitive Avalanche Energy (note1)

EAR

60

mJ

Power Dissipation (TC = 25ºC)

PD

690

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55~+150

ºC

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Resistance

Parameter

Symbol

Value

Unit

Thermal Resistance, Junction-to-Case

RthJC

0.18

 

ºC/W

Thermal Resistance, Junction-to-Ambient

RthJA

40

"


Specifications TJ = 25ºC, unless otherwise noted

 

Parameter

 

Symbol

 

Test Conditions

Value

 

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250µA

800

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS =800, VGS = 0V, TJ = 25ºC

--

--

1.0

μA

Gate-Source Leakage

IGSS

VGS = ±30V

--

--

±100

nA

Gate-Source Threshold Voltage

VGS(th)

IDS = 250µA

2.5

--

4.5

V

Drain-Source On-Resistance (Note3)

RDS(on)

VGS = 10V, ID = 25A

--

120

130

mΩ

Dynamic

Input Capacitance

Ciss

 

VGS = 0V, VDS = 25V, f = 1.0MHz

--

14600

--

 

 

pF

Output Capacitance

Coss

--

1300

--

Reverse Transfer Capacitance

Crss

--

66

--

Total Gate Charge

Qg

 

VDD =400V, ID =50A, VGS = 10V

--

360

--

 

 

nC

Gate-Source Charge

Qgs

--

80

--

Gate-Drain Charge

Qgd

--

120

--

Turn-on Delay Time

td(on)

 

 

VDD = 400V, ID =50A, RG = 10 Ω

--

110

--

 

 

 

ns

Turn-on Rise Time

tr

--

200

--

Turn-off Delay Time

td(off)

--

160

--

Turn-off Fall Time

tf

--

185

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

IS

 

TC = 25 ºC

--

--

50

 

A

Pulsed Diode Forward Current

ISM

--

--

400

Body Diode Voltage

VSD

TJ = 25ºC, ISD = 25A, VGS = 0V

--

--

1.4

V

Reverse Recovery Time

trr

VGS = 0V,IS = 50A,

diF/dt =100A /μs

--

520

--

ns

Reverse Recovery Charge

Qrr

--

5.0

--

μC

Notes

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC

Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

"