2800V High power thyristor for power converter
- YZPST-5STP24L2800
High Power Thyristor Phase Control
YZPST-5STP24L2800
HIGH POWER THYRISTOR FOR PHASE CONTROL FEATURES AND APPLICATIONS
Features:
. All Diffused Structure
. Interdigitated Amplifying Gate Configuration
. Guaranteed Maximum Turn-Off Time
. High dV/dt Capability
. Pressure Assembled Device
Conducting - on state
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Average value of on-state current |
IT(AV)M |
|
2400 |
|
A | Sinewave,180o conduction,T =85oC c |
RMS value of on-state current | ITRMSM |
| 4120 |
| A | Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
46
43 |
|
kA
kA | 8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC |
I square t | I2t |
| 8.7x106 |
| A2s | 8.3 msec |
Latching current | IL |
| 200 |
| mA | VD = 24 V; RL= 12 ohms |
Holding current | IH |
| 75 |
| mA | VD = 24 V; I = 2.5 A |
Peak on-state voltage | VTM |
| 1.35 |
| V | I = 3000 A; T = 125 oC TM j |
Threshold vlotage | VT0 |
| 0.85 |
| V |
|
Slope resistance | rT |
| 0.16 |
| mΩ |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
300 |
|
A/ s | Switching from VDRM 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
150 |
|
A/ s |
Switching from VDRM 1000 V |
Gating
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Peak gate power dissipation | PGM |
| - |
| W |
|
Average gate power dissipation |
PG(AV) |
|
- |
|
W |
|
Peak gate current | IGM |
| - |
| A |
|
Gate current required to trigger all units |
IGT |
|
400 |
|
mA | V = 10 V;I =3A;T = +25 oC D T j |
Gate voltage required to trigger all units |
VGT |
|
2.6 |
|
V |
V = 10 V;I =3A;T = +25 oC D T j |
Peak negative voltage |
VRGM |
|
- |
|
V |
Dynamic
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Delay time | tgd |
| 3 | - | s | VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time | tgt |
| - | - |
| |
Turn-off time (with VR = -5 V) |
tq |
- |
- |
400 |
s | ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
Reverse recovery current |
Irm |
|
- |
|
A | ITM=4000A, tp=2000us, di/dt=60A/us |
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
Operating temperature | Tj | -40 | +125 |
| oC |
|
Storage temperature |
Tstg |
-40 |
+140 |
|
oC |
|
Thermal resistance - junction to case |
R (j-c) |
| 10 20 |
|
K/kW | Double sided cooled * Single sided cooled * |
Thermal resistamce - case to sink |
R (c-s) |
| 2 4 |
|
K/kW | Double sided cooled * Single sided cooled * |
Thermal resistance - junction to case |
R (j-s) |
| - - |
|
K/kW | Double sided cooled * Single sided cooled * |
Mounting force | F | 45 | 60 | 50 | kN |
|
Weight | W |
|
| 0.9 | Kg | about |
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in last page of this Technical Data
Outline
