Fast Switching Reverse-conducting Thyristor(FR1000BX/BF)

  • All Diffused Structure
  • Interdigitated Amplifying Gate Configuration
  •  Blocking capabilty up to 2500 volts
  • Guaranteed Maximum Turn-Off Time
  • High dV/dt Capability
  • Pressure Assembled Device
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Fast Switching Reverse-conducting Thyristor(FR1000BX/BF)

VDRM
2500
VDSM
2500

V RRM = Repetitive peak reverse voltage
V DRM = Repetitive peak off state voltage
V RSM = Non repetitive peak reverse voltage (2)

  • All Diffused Structure
  • Interdigitated Amplifying Gate Configuration
  •  Blocking capabilty up to 2500 volts
  • Guaranteed Maximum Turn-Off Time
  • High dV/dt Capability
  • Pressure Assembled Device
ll ratings are specified for Tj=25 oC unlessotherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

waveshape to 80% rated VDRM. Gate open.

Tj = 125 oC.

(5) Non-repetitive value.

RCTFR1000

Download the PDF Product specification

 

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