“Men Black Sports Shoes” has been added to your cart.

Wholesale power thyristors 800V semiconductors SCR electronic


  • YZPST-X0206

█  Features

 IT(AV):0.8  

 IGT200μA  

● Glass Passivation Type    

 Non-Insulated Type

  Applications

Leakage protector, timer, and gas igniter   

 Temperate controller



""


  Maximum RatingsTa=25℃)

Parameter

Symbol

Voltage class

Unit

-6

-8

Repetitive peak reverse voltage 

VRRM

600

800

V

Repetitive peak off-state voltage

VDRM

600

800

V

RMS on-state current  

IT (RMS)

1.25

A

Average on-state current

IT (AV)

0.8

A

Surge on-state current  

ITSM

22.5

A

I2t for fusing    

I2t

2.5

A2s

Average gate power dissipation  

PG (AV)

0.2

W

Peak gate reverse voltage

VRGM

8

V

Peak gate forward current

IFGM

1.2

A

Junction temperature

Tj

– 40 to +125 

°C

Storage temperature

Tstg

– 40 to +150

°C

  

  Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Repetitive peak reverse current

IRRM

0.5

mA

Tj = 125°C, VRRM applied

Repetitive peak off-state current

IDRM

0.5

mA

Tj = 125°C, VDRM applied, RGK = 1 kÙ

On-state voltage  

VTM

1.45

V

Ta = 25°C, ITM 2.5A

Gate trigger voltage    

VGT

0.8

V

Tj = 25°C, V12 V, RL 140Ù

Gate non-trigger voltage

VGD

0.1

V

Tj = 125°C, V= VDRM,RGK = 1 kÙ

Gate trigger current

IGT

20

200

μA

Tj = 25°C, V12 V, RL 140Ù

Holding current

IH

5

mA

Tj = 25°C, V= 12 V,RGK = 1 kÙ

Thermal resistance    

Rth (j-a)

150

°C/W

Junction to ambient



  Trigger Current Item

Item

A

B

C

D

E

F

IGT (μA)

20 to 50

40 to 80

70 to 100

20 to 80

20 to 100

100 to 200

TO-92 Package Dimensions



"