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N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET


  • YZPST-1A01K170K

YZPST-1A01K170K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode


VDS = 1700 V

RDs(on) = 1.0Q 

lDS@25°C = 5.0 A


Features

High-voltage Capacitive
High Blocking Voltage with low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Avalance Ruggedness
YZPST-1A01K170K-1

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Benefits

Higher System Efficiency
Reduced Cooling Requirements
Increased System Reliability
Increased System Switching Frequency

Applications
Auxiliary Power Supplies
Switch Mode Power Supplies

Part NumberPackage
1A01K170KTO-247-3

Maximum Ratings (Tc=25°C unless otherwise specified)

YZPST-1A01K170K-2

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