N-Channel Enhancement Mode 1700V Silicon Carbide Power MOSFET
- YZPST-1A01K170K
YZPST-1A01K170K
Silicon Carbide Power MOSFET
N-Channel Enhancement Mode
VDS = 1700 V
RDs(on) = 1.0Q
lDS@25°C = 5.0 A
Features
High-voltage Capacitive
High Blocking Voltage with low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Ultra-low Drain-gate capacitance
Avalance Ruggedness
Benefits
Higher System Efficiency
Reduced Cooling Requirements
Increased System Reliability
Increased System Switching Frequency
Applications
Auxiliary Power Supplies
Switch Mode Power Supplies
| Part Number | Package |
| 1A01K170K | TO-247-3 |
Maximum Ratings (Tc=25°C unless otherwise specified)
