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Most popular stud triacs YZPST-KS150-1800V wholesale manufacturer YZPST-KS150-1800V


  • YZPST-KS150-1800V

YZPST-KS150-1800V

Most popular stud triacs stud Thyristor YZPST-KS150-1800V

Maximum Ratings And Characteristics

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC


Tstg

Storage temperature

-40~150

oC


R th (j-c)

Thermal resistance - junction to case

0.13

oC/W

DC operation Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.075

oC/W

Single sided cooled

P

Mounting force

31

Nm

± 10 %

W

Weight

-

g

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Symbol

Parameter

Values

Units

Test Conditions

ON-STATE




ITRMS

RMS value of on-state current

150

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

2000

A

 

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

16

KA2s

8.3 msec and 10.0 msec

IL

Latching current

-

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

-

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.65

V

ITM = 450 A; Tj = 25 oC

di/dt

Critical rate of rise

of on-state current

non-repetitive

-

A/ms

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM

repetitive

10

BLOCKING




VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1800

V


VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1900

V


IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

25

mA

Tj = 100 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

300

V/ms

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING




PG(AV)

Average gate power dissipation

4

W


PGM

Peak gate power dissipation

15

W


IGM

Peak gate current

-

A


IGT

Gate trigger current

150

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

-

V

Tj = 125 oC

SWITCHING




tq

Turn-off time

-

ms

ITM=550A, TJ=TJmax, di/dt=40A/μs,

VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs

td

Delay time

-

Gate current A, di/dt=40A/μs,

Vd=0.67%VDRM, TJ=25 oC

Qrr

Reverse recovery charge

-



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