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IGBT CHIP 75A 1200V IGBT Module


  • YZPST-75HF120TK-G1

YZPST-75HF120TK-G1

75A 1200V IGBT Module

FEATURES
High short circuit capability, self limiting short circuit current

High short circuit capability ,self limiting short circuit current

IGBT CHIP(Trench+ Field Stop technology)

VcE(sat) with postive temperature cofficient

Fast switching and short tail current, Low switching losses

Free wheeling diodes with fast and soft reverse recovery

Temperature sense included

 

APPLICATIONS

High frequency switching application

Welding converters

Motion/servo control

UPS systems


ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

IGBT

VCES

Collector - Emitter Voltage

TVj=25°C

1250

V

VGES

Gate - Emitter Voltage

 

±30

V

 

IC

 

DC Collector Current

TC=25°C

115

A

TC=80°C

75

A

ICM

Repetitive Peak Collector Current

tp=1ms

150

A

Ptot

Power Dissipation Per IGBT

 

500

W

Diode

VRRM

Repetitive Reverse Voltage

TVj=25°C

1250

V

 

IF(AV)

 

Average Forward Current

TC=25°C

115

A

TC=80°C

75

A

IFRM

Repetitive Peak Forward Current

tp=1ms

150

A

I2t

 

TVj =125°C,

t=10ms, VR=0V

 

2810

A2s


""


MODULE CHARACTERISTICS

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

TVj max

Max. Junction Temperature

 

 

 

150

°C

TVj op

Operating Temperature

 

-40

 

150

°C

Tstg

Storage Temperature

 

-40

 

125

°C

Visol

Insulation Test Voltage

AC, t=1min

 

3000

 

V

Torque

To-Sink

Recommended M6

3

 

5

N·m

Torque

To-Terminal

Recommended M5

2.5

 

5

N·m

Weight

 

 

 

176

 

g


PACKAGE OUTLINE

YZPST-75HF120TK-G1-1

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