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High dV/dt Capability 1600V high power thyristor for phase control applications


  • YZPST-R3559TD16K

HIGH POWER THYRISTOR FOR PHASE CONTROL APPLICATIONS

 high power thyristor YZPST-R3559TD16K

Features:  

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration                

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

Blocking - Off State

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3559TD16K

  1600

  1600

  1700

VRRM = Repetitive peak reverse voltage

VDRM = Repetitive peak off state voltage

VRSM = Non repetitive peak reverse voltage (2)

Repetitive peak reverse leakage and off state leakage

IRRM / IDRM

 

20 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Notes:

All ratings are specified for Tj=25 oC unless

otherwise stated.

(1) All voltage ratings are specified for an applied

      50Hz/60zHz sinusoidal waveform over the

      temperature range  -40 to +125 oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 oC.

(4) Minimum value for linear and exponential

     waveshape to 80% rated VDRM. Gate open.

     Tj = 125 oC.

(5) Non-repetitive value.

(6) The value of di/dt is established in accordance

      with EIA/NIMA Standard RS-397, Section

      5-2-2-6. The value defined would be in addi-

      tion to that obtained from a snubber circuit,

      comprising a 0.2 mF capacitor and 20 ohms

      resistance in parallel with the thristor under

      test.

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Conducting - on state

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

 

  3500

 

A

Sinewave,180o conduction,Tc=70oC

RMS value of on-state current

ITRMS

 

  7000

 

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

 

ITSM

 

42000

   

38000

 

A

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

7.5x106

 

A2s

8.3 msec

Latching current

IL

 

    1000

 

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

 

     500

 

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

 

     1.95

 

V

ITM = 5000 A; Tj = 125 oC

Critical rate of rise of on-state

current (5, 6)

di/dt

 

      800

 

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

 

      300

 

A/ms

Switching from VDRM £ 1000 V

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

200

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

5

 

W

 

Peak gate current

IGM

 

20

 

A

 

Gate current required to trigger all units

IGT

 

300

200

125

 

mA

mA

mA

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = +25 oC

VD = 6 V;RL = 3 ohms;Tj = +125oC

Gate voltage required to trigger all units

 

 

VGT

 

 

0.30

5

4

 

 

V

V

V

VD = 6 V;RL = 3 ohms;Tj = -40 oC

VD = 6 V;RL = 3 ohms;Tj = 0-125oC

VD = Rated VDRM; RL = 1000 ohms;

Tj = + 125 oC

Peak negative voltage

VGRM

 

20

 

V

1600V high power thyristor

thyristor for phase control applications

High dV/dt thyristor

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