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Fast thyristor fr1000ax50 fast switching reverse-conducting thyristor rct


  • YZPST-FR1000AX50

Fast Switching Reverse-conducting Thyristor

Features:

. All Diffused Structure

. Interdigitated Amplifying Gate Configuration                  

. Blocking capabilty up to 2500 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Blocking - Off State

Repetitive peak off state leakage

IDRM

 

 

20 mA

80mA (3)

Critical rate of voltage rise

dV/dt (4)

700 V/msec


Device Type

VDRM (1)

VDSM (1)

FR1000AX50

2500

2500


""


Conducting - on state

Parameter

Symbol

 

Max.

Typ.

Units

Conditions

RMS value of on-state current

ITRMS

 

1550

 

A

Nominal value

Average on-state current

IT(AV)

 

 

   

1000

 

 

A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge

(non repetitive) current

 

ITSM

 

 

14000

 

 

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

 

8.2.x105

 

A2s

8.3 msec and 10.0 msec

RNS reverse currrnt

IR(RMS)

 

630

 

A

 

Average reverse current

IR(AV)

 

    400

 

A

Continuous single-phase,half sine wave,180°conduction

Peak on-state voltage

VTM

Conducting - on state

 

2.2

 

 

V

ITM=1000A Tj = 125 oC

Peak reverse voltage

VRM

 

 

4.0

 

V

IRM=1200A, Tj = 125 oC

Critical rate of rise of on-state

current

di/dt

 

      300

 

A/ms

VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=125      

Critical rate of decrease of reverse conmmutating current

(di/dt)C

 

200

 

A/ms

ITM=4000A,tw=60us,IRM=4000A,dv/dt=700V/us,VDM=1/2VDRN,Tj=125,Saturable reactor7500v.us

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

30

 

W

tp = 40 us

Average gate power dissipation

PG(AV)

 

8

 

W

 

Peak gate current

IGM

 

10

 

A

 

Gate current required to trigger all units

IGT

 

350

 

 

mA

 

 

VD = 6 V;RL = 2 ohms;Tj = +25 oC

 

Gate voltage required to trigger all units

 

 

VGT

 

 

 

4

 

 

 

V

 

VD = 6 V;RL = 2 ohms;Tj = 25oC

 

Peak non- trigger voltage

VGD

 

0.2

 

V

Tj = 125 oC;VD=1/2VDRM


Dynamic

Parameter

Symbol

.

Max.

Typ.

Units

Conditions

Turn-off time  

tq

 

    50

 

        

 

ms

ITM =4000 A; di1/dt = -200A/ms;

di2/dt=50A/us,IRM=500A; dV/dt =700 V/ms VDR=1250V

Tj = 125 oC;tw=60us

 

 

 

 

 

 

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

 

oC

 

Storage temperature

Tstg

-40

+150

 

oC

 

Thyristor part thermal resistance - junction to fin

RQ (j-f)

 

0.022

 

 

oC/W

Double sided cooled

 

Diode part thermal resistamce – junction to fin

RQ (j-f)

 

0.070

 

 

oC/W

Double sided cooled

 

Mounting force

P

 

45

 

kN

 

Weight

W

 

670

 

g






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