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Fast switching 300A 1200V IGBT Module


  • YZPST-300HF120TK-G2

YZPST-300HF120TK-G2

300A 1200V IGBT Module

FEATURES
High short circuit capability, self limiting short circuit current
IGBT CHIP(Trench+ Field Stop technology)
VCE(sat) with positive temperature coefficient
Fast switching and short tail current, Low switching losses
Free wheeling diodes with fast and soft reverse recovery
Temperature sense included
APPLICATIONS
High frequency switching application
Medical applications
Motion/servo control
UPS systems

ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Values

Unit

IGBT

VCES

Collector - Emitter Voltage

TVj=25°C

1250

V

VGES

Gate - Emitter Voltage

 

±30

V

 

IC

 

DC Collector Current

TC=25°C

450

A

TC=80°C

300

A

ICM

Repetitive Peak Collector Current

tp=1ms

600

A

Ptot

Power Dissipation Per IGBT

 

2083

W

Diode

VRRM

Repetitive Reverse Voltage

TVj=25°C

1250

V

 

IF(AV)

 

Average Forward Current

TC=25°C

450

A

TC=80°C

300

A

IFRM

Repetitive Peak Forward Current

tp=1ms

600

A


ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

IGBT

VGE(th)

Gate - Emitter Threshold Voltage

VCE=VGE, IC=2.0mA

5.0

 

6.8

V

 

VCE(sat)

Collector - Emitter

IC=300A, VGE=15V, TVj=25°C

 

2.2

2.6

V

Saturation Voltage

IC=300A, VGE=15V, TVj=125°C

 

2.65

 

V

 

ICES

 

Collector Leakage Current

VCE=1250V, VGE=0V, TVj=25°C

 

 

1

mA

VCE=1250V, VGE=0V, TVj=125°C

 

 

5

mA

Rgint

Integrated Gate Resistor

Per switch

 

5

 

IGES

Gate Leakage Current

VCE=0V,VGE±15V, TVj=125°C

-500

 

500

nA

Cies

Input Capacitance

 

VCE=25V, VGE=0V, f =1MHz

 

21.3

 

nF

Cres

Reverse Transfer Capacitance

 

1.42

 

nF

 

td(on)

 

Turn - on Delay Time

VCC=600V,IC=300A,

TVj =25°C

 

393

 

ns

R=3.3Ω,

TVj =125°C

 

395

 

ns

 

tr

 

Rise Time

VGE=±15V,

TVj =25°C

 

130

 

ns

Inductive Load

TVj =125°C

 

135

 

ns

 

td(off)

 

Turn - off Delay Time

VCC=600V,IC=300A,

TVj =25°C

 

570

 

ns

R=3.3Ω,

TVj =125°C

 

600

 

ns

 

tf

 

Fall Time

VGE=±15V,

TVj =25°C

 

145

 

ns

Inductive Load

TVj =125°C

 

155

 

ns

 

Eon

 

Turn - on Energy

VCC=600V,IC=300A,

TVj =25°C

 

7.7

 

mJ

R=3.3Ω,

TVj =125°C

 

14.5

 

mJ

 

Eoff

 

Turn - off Energy

VGE=±15V,

TVj =25°C

 

26.3

 

mJ

Inductive Load

TVj =125°C

 

33.5

 

mJ

 

ISC

 

Short Circuit Current

 

tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V

 

 

2100

 

 

A

RthJC

Junction-to-Case Thermal Resistance (Per IGBT)

 

 

0.07

K /W

Diode

 

VF

 

Forward Voltage

IF=300A , VGE=0V, TVj =25°C

 

1.82

2.25

V

IF=300A , VGE=0V, TVj =125°C

 

2.0

 

V

Qrr

Reversed Charge

IF=300A , VR=600V

 

 

40

 

uC

IRRM

Max. Reverse Recovery Current

diF/dt=-2360A/μs

 

 

250

 

A

Erec

Reverse Recovery Energy

TVj =125°C

 

 

18.5

 

mJ

RthJCD

Junction-to-Case Thermal Resistance

(Per Diode)

 

 

 

0.12

K /W

PACKAGE OUTLINE

YZPST-300HF120TK-G2-1