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Electric diode standard recovery stud diodes 95HF80


  • YZPST-95HF80

STANDARD RECOVERY DIODES STUD

YZPST-95HF80

Forward Conduction

Symbol

Typ.

Units

Conditions

VRRM

800

V

Tj = 150 oC

VRSM

960

V

Tj = 150 oC

IF(AV)

95

A

Sinewave,180o conduction,Tc=140oC

IF(RMS)

149

A

Nominal value

IFSM

2000

A

10.0 msec (50Hz), half sinewave,

Tj = 180 oC, VRM = 0.6VRRM

I2t

20

kA2s

VFM

1.40

V

ITM = 267A; Tc=25oC

VF0

0.73

V


rf

3.0



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Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

VRRM

 

 

800

V

Tj = 150 oC

Non repetitive peak reverse voltage

VRSM

 

 

960

V

Tj = 150 oC

Max. average forward current

IF(AV)

 

 

95

A

Sinewave,180o conduction,Tc=140oC

Max. RMS forward current

IF(RMS)

 

 

149

A

Nominal value

Max. peak, one-cycle forward,

non-repetitive surge current

IFSM

 

 

2000

A

10.0 msec (50Hz), half sinewave,

Tj = 180 oC, VRM = 0.6VRRM

Maximum I2t for fusing

I2t

 

 

20

kA2s

Max. forward voltage drop

VFM

 

 

1.40

V

ITM = 267A; Tc=25oC

Threshold voltage

VF0

 

 

0.73

V

 

Slope resistance

rf

 

 

3.0


Thermal and Mechanical Specifications

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-55

+180


oC


Storage temperature

Tstg

-55

+180


oC


Reverse recovery charge

Qrr



-

μc


Thermal resistance - junction to case

RQ (j-c)


-

-

0.27

K/W


Thermal resistamce - case to heatsink

RQ (c-s)


-

-

0.25

K/W


Mounting force

P



3.4

Nm

± 10%

Weight

W

-

-

16

g

about

Case style




DO-5


See Outline Table

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