“Men Black Sports Shoes” has been added to your cart.

65R72GF N-channel Power MOSFET as replacement of STW48N60M2


  • YZPST-65R72GF

N-channel Power MOSFET


Type:YZPST-65R72GF


PRODUCT SUMMARY
Vds (V) at Tj max.700
Rds(ofi)max. at 25°C (mQ)Vgs=10V 72
Qg max. (nC)130
Qgs (nC)30
Qgd (nC)34
Configurationsingle

Features
Fast Body Diode MOSFET
|D=47A(Vgs=10V)
Ultra Low Gate Charge
Improved dv/dt Capability
RoHS compliant
YZPST-65R72GF Power MOSFET

""


Applications

Switching Mode Power Supplies (SMPS)
Server and Telecom Power Supplies
Welding& Battery Chargers
Solar(PV Inverters)
AC/DC Bridge Circuits


ORDERING INFORMATION
DeviceYZPST-65R72GF
Device PackageTO-247
Marking65R72GF
ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted)
ParameterSymbolLimitUnit
Drain to Source VoltageVdss650V
Continuous Drain Current (@Tc=25°C)Id47⑴A
Continuous Drain Current (@Tc=100°C)29⑴A
Drain current pulsed (2)Idm138⑴A
Gate to Source VoltageVgs±30V
Single pulsed Avalanche Energy(3)Eas1500mJ
MOSFET dv/dt ruggedness (@VDS=0~400V)dv/dt25V/ns
Peak diode Recovery dv/dt ⑷dv/dt15V/ns
Total power dissipation (@Tc=25°C)Pd417W
Derating Factor above 25°C3.34w/°c
Operating Junction Temperature & StorageTemperatureTstg, Tj-55to + 150°C
Maximum lead temperature for soldering purposeTl260°C

Notes

1. Drain current is limited by maximum junction temperature.

2. Repetitive rating : pulse width limited by junction temperature.

3 L = 37mH, lAS = 9A, VDD = 50V, RG=25Q, Starting at Tj = 25°C

4. ISD < lD, di/dt = WOA/us, VDD < BVDSS, Starting at Tj =25°C

""