3300V Bi-Directional Control Thyristor SKP24F33Q

YZPST-SKP24F33Q

Bi-Directional Control Thyristor

Blocking

Parameter

Symbol

Unit

SKP24F33Q

SKP24F30Q

SKP24F28Q

SKP24F26Q

Conditions

Non-repetitive peak off-state

and reverse voltage

VDSM、VRSM

3400

3100

2900

2700

f = 5 Hz, tp = 10ms

repetitive peak off-state and

reverse voltage

VDRM、VRRM

3300

3000

2800

2600

f = 50 Hz, tp = 10ms

Non-repetitive peak off-state

and reverse current

IDSM、IRSM

400

VDSM、VRSM ,Tj = 125°C

repetitive peak off-state and

reverse current

IDRM、IRRM

400

VDRM、VRRM, Tj = 125°C

Critical rate of rise of

off-state voltage

dv/dtcrit

V/µs

1000

Exp.to 0.67VDRM, Tj =

125°C

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Description

On-state

Parameter	Symbol	Unit	Max	Conditions
Average on-state current	ITAVM	A	2437
RMS on-state current	ITRMS	A	3818	Half sine wave, TC = 70°C
Peak non-repetitive current	ITSM	KA	43
Limiting load integral	I2t	kA2s	9622	tp=10ms, Tj =125°C, Half sine wave, VD = VR = 0V after surge
Peak on-state voltage	VT	V	1.45	IT=3000A ,Tj =125°C
Threshold voltage	VT0	V	0.85
Slope resistance	rT	mΩ	0.2	IT=1500-4500A, ,Tj =125°C
		mA	150	Tj=25°C
Holding current	IH	mA	130	Tj=125°C
		mA	1000	Tj=25°C
Latching current	IL	mA	900	Tj=125°C

Switching

Parameter		Symbol	Unit	Max	Conditions
Critical rate of rise of					VD ≤ 0.67 VDRM , Tj =125°C, f=50Hz
on-state current		di/dtcrit	A/µs	200	ITRM≤2400A, IFG=2.0 A ,tr = 0.5 µs ,
Circuit-commutated turn-off					VD ≤ 0.67 VDRM
time		tq	µs	700	dvD/dt = -30 V/µs	ITRM =2000A, Tj = 125°C VR = 200 V,
Reverse	Min		µAs	6000		diT/dt = -10 A/µs
recovery charge	Max	Qrr	µAs	8000

Triggering

Parameter	Symbol	Unit	Min	Max	Conditions
Gate-trigger voltage	VGT	V		2.50	Tj = 25°C
Gate-trigger current	IGT	mA		300	Tj = 25°C
Gate non-trigger voltage	VGD	V	0.3		VD = 0.4*VDRM Tj = 125°C
Gate non-trigger current	IGD	mA	10		VD = 0.4*VDRM Tj = 125°C
Peak forward gate voltage	VFGM	V		12
Peak forward gate current	IFGM	A		10
Peak resverse gate voltage	VRGM	V		10
Average gate power loss	PG	W		3.0