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1500V N-Channel Power MOSFET


  • YZPST-FM3N150C

1500V N-Channel MOSFET

YZPST-FM3N150C

General Description

This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices can be used in various power switching circuit for system miniaturization and higher efficiency.

Features

3A, 1500V, RDS(on)typ. = 5Q@VGS = 10 V ld=1.5A

Low gate charge (typical9.3nC)

Low gate charge (typical2.4pf)

Fast switching

100% avalanche tested

YZPST-FM3N150C-1


Absolute Maximum Ratings Tc = 25 °C unless otherwise noted

SymbolParameterJFFM3N150CUnits
VdssDrain - Source Voltage1500V
IdDrain CurrentContinuous (Tc = 25 °C )1.8A
Continuous ( Tc = 100 °C )1.2A
IdmDrain Current - Pulsed ( Note 1)12A
VgssGate - Source Voltage±30V
EASSingle Pulsed Avalanche Energy ( Note 2 )225mJ
dv/dtPeak Diode Recovery dv/dt ( Note 3 )5V/ns
PdPower Dissipation (Tc = 25 °C )30W
Tj,TstgOperating and Storage Temperature Range-55 to +150°C
TlMaximum lead temperature for soldering purposes300°C
1/8〃 frome case for 5 seconds



Thermal characteristics

SymbolParameterJFFM3N150CUnits
RaicThermal Resistance, Junction-to-Case4.1°C/W
RqjaThermal Resistance, Junction-to-Ambient62.5°c/w

Electrical Characteristics tc=25 °c unless otherwise noted

SymbolParameterTest ConditionsMinTypMaxUnits
Off Characteristics
BVdssDrain - Source Breakdown VoltageVgs = 0 V, Id =250 uA1500V
/ BVdss/Breakdown Voltage Temperature CoefficientId = 250 uA, Referenced to--1.3--v/°c
Tj25 °C
Zero Gate Voltage Drain CurrentVds = 1500 V, Vgs = 0 V25uA
IdssVds = 1200 V, Tc = 125 °C----500uA
IgssfGate-Body Leakage Current, ForwardVgs = 30 V, Vgs = 0 V100nA
IgssrGate-Body Leakage Current, ReverseVgs = -30 V, Vgs = 0 V-100nA
On Characteristics
VGS(th)Gate Threshold VoltageVds = Vgs, Id = 250 uA35V
RDS(on)Static Drain-Source on-Resista neeVgs = 10 V, Id= 1.5A58Q
gFSForward TransconductanceVds = 30 V, Id= 1.5 A ( Note--4.5--S
4)
Dynamic Characteristics
CissInput CapacitanceVds = 25 V, Vgs = 0 V, f =1938pF
CossOutput Capacitance1.0 MHz104pF
CrssReverse Transfer Capacitance2.4pF
RgGate resistanceF= 1.0 MHz3.5Q
Switching Characteristics
td(on)Turn-On Delay Time34ns
trTurn-On Rise TimeVds = 750 V, Id=3.0A/ Rg =17ns
td(off)Turn-Off Delay Time100 , Vgs = 10 V (Note 4,5)56ns
tfTurn-Off Fall Time27ns
QeTotal Gate ChargeVds = 750 V, Id =3.0 A Vgs =9.3nC
QgsGate-Source Charge10 V (Note 4,5)15nC
QgdGate-Drain Charge5.3nC
Drain - Source Diode Characteristics and Maximum Ratings
IsMaximum Continuous Drain-Source Diode Forward Current3A
IsmMaximum Pulsed Drain-Source Diode Forward Current12A
VsdDrain-Source Diode Forward VoltageVgs = 0 V, Is = 3.0 A1.5V
trrReverse Recovery TimeVgs = 0 V, Is = 3.0 A302ns
QrrReverse Recovery ChargedlF/dt = 100 A/us ( Note--10--uC
4)



Notes:

1. Repetitive Rating : Pulsed width limited by maximum junction temperature

2. L= lO.OmH , Ias = 6.7A, Rg = 25Q, StartingTj = 25°C

3. Isd < 3.0Az di/dt < lOOA/us, Vdd < BVdss, Starting Tj = 25°C

4. Pulsed Test: Pulsed width <3OOusz Duty cycle < 2%

5. Essentially independent of operating temperature

YZPST-FM3N150C-2