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1300v fast switching reverse conducting thyristor rct


  • YZPST-SHR400R22

YZPST-SHR400R22 Fast Switching Reverse-conducting Thyristor

RCT FOR INVERTER AND CHOPPER APPLICATIONS

Features:

 All Diffused Structure

 Interdigitated Amplifying Gate Configuration                  

 Blocking capabilty up to 1300 volts

 Guaranteed Maximum Turn-Off Time

 High dV/dt Capability

 Pressure Assembled Device

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Repetitive peak off state leakage

IDRM

35 mA

Critical rate of voltage rise

dV/dt

1000 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ

Units

Conditions

RMS value of on-state current

ITRMS


 630


A

Nominal value

Average on-state current

IT(AV)


   400


A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge on-state current(non repetitive)

ITSM


7200


A

50Hz, sinusoidal wave-

shape, 180o conduction, Tj = 11oC

I2t Limit Value

I2t


200x103

(On-Current)


A2s


31x103

(Reverse Current)

Peak on-state voltage

VTM


3.0


V

ITM =1250A; Tj = 25 oC

Critical rate of rise of on-state

current

di/dt


      100


A/ms

VD=1/2VDRM,ITM=800A f=60HZIGM=1.5A,diG/dt=1.0A/us,Tj=115      

Average reverse current

IR(AV)


     150


A

Continuous single-phase,half sine wave,180°conduction

RMS reverse currrnt

IR(RMS)


235


A


Peak reverse voltage

VRM


2.5


V

IRM=500A, Tj = 25 oC

Peak one cycle surge  reverse current(non repetitive)

IRSM


2500


A

50Hz, sinusoidal wave-

shape, 180o conduction, Tj = 11oC

Critical rate of rise of commutating off-state voltage 

(dv/dt)C

200



A/ms

ITM=2000A,tw=60us,IRM=1000A, ,VDM=1/2VDRM,Pulse width 60m,Tj=115,

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM


20


W

t= 40 us

Average gate power dissipation

PG(AV)


4


W


Peak gate current

IGM


4


A


Gate current required to trigger all units

IGT


200

 


mA

 

VD = 6 V;RL = 6 ohms;TC = 25 oC

Holding current

IH


500



Tj = 2o;RL = 6 ohms

Gate voltage required to trigger all units

VGT


3.0


V

VD = 6 V;RL = 6 ohms;TC = 25oC

Peak non- trigger voltage

VGD


0.15


V

Tj = 11oC;VD=1/2VDRM

Dynamic

Parameter

Symbol

Min

Max.

Typ.

Units

Conditions

Turn-off time  

tq

 

40

 

ms

ITM = 400 A; di1/dt = -50A/ms;

di2/dt=50A/us,IRM=10A; dV/dt(c) =200 V/ms VDR=650V

Tj = 115 oC;tw=60us

 

 

 

 

 

 

CASE OUTLINE AND DIMENSIONS.             Reverse-conducting Thyristor


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